Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation

Design, Modeling, and Characterization of Power MOSFET in 4H-SiC for Extreme Environment Applications

Silicon Carbide (SiC) is an emerging technology for extreme environment electronics applications. In this paper, an analytical model for vertical DIMOS transistor structure in SiC is presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. A good agreement between the analytical model and...

Influence of High-k Gate Dielectric on Nanoscale DG-MOSFET

Influence of dielectric materials as gate oxide on various short channel device parameters using a 2-D device simulator has been studied in this paper. It is found that the use of high-k dielectrics directly on the silicon wafer would degrade the performance. This degradation is mainly due to the fringing field effect developed from gate to source/drain. This fringing field will further generat...

Multi-gate Mosfet Structures with High-k Dielectric Materials

Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most impor...

Characterization of Dielectric Layers for Passivation of 4H-SiC Devices

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes